发明名称 Semiconductor device with DDR memory controller
摘要 In a DDR memory controller, a clock control circuit is configured to output a clock signal selected from among a plurality of clock signals with different frequencies based on a frequency selection signal, to a DDR memory as an operation clock signal. A master DLL circuit is configured to receive one of the plurality of clock signals which has a maximum frequency as a reference clock signal to determine a delay code. A slave delay circuit is configured to delay a strobe signal from the DDR memory based on the determined delay code to generate an internal strobe signal for a data signal from the DDR memory.
申请公布号 US7911858(B2) 申请公布日期 2011.03.22
申请号 US20080256024 申请日期 2008.10.22
申请人 RENESAS ELECTRONICS CORPORATION 发明人 SUGISHITA KYOSUKE
分类号 G11C7/00;G11C8/02 主分类号 G11C7/00
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