发明名称 |
Phase change memory with tapered heater |
摘要 |
An embodiment of the present invention includes a phase change memory (PCM) structure configurable for use as a nonvolatile storage element. The element includes at least one bottom electrode; at least one phase change material layer on at least a portion of an upper surface of the bottom electrode; and at least one heater layer on at least a portion of an upper surface of the phase change material layer, wherein the heater layer has a tapered shape such that an upper surface of the heater layer has a cross-sectional width that is longer than a cross-sectional width of a bottom surface of the heater layer contacting the phase change material layer.
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申请公布号 |
US7910911(B2) |
申请公布日期 |
2011.03.22 |
申请号 |
US20090511602 |
申请日期 |
2009.07.29 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BREITWISCH MATTHEW;HAPP THOMAS;JOSEPH ERIC A.;LUNG HSIANG-LAN;PHILIPP JAN BORIS |
分类号 |
H01L47/00 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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