发明名称 |
Semiconductor device and method of manufacturing a semiconductor device |
摘要 |
A semiconductor device is disclosed having a conductive gate structure overlying a semiconductor layer having a major surface. An isolation material is recessed within a trench region below the major surface of the semiconductor layer. An epitaxial layer is formed overlying a portion of the major surface and on an active region forming a sidewall of the trench.
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申请公布号 |
US7910996(B2) |
申请公布日期 |
2011.03.22 |
申请号 |
US20090496133 |
申请日期 |
2009.07.01 |
申请人 |
GLOBALFOUNDRIES INC. |
发明人 |
BESSER PAUL R.;LUNING SCOTT D. |
分类号 |
H01L29/12 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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