| 摘要 |
Electronic devices and methods for forming electronic devices that allow for a reduction in device dimensions while also maintaining or reducing leakage current for non-volatile memory devices are provided. In one embodiment, a method of fabricating a non-volatile memory device is provided. The method comprises depositing a floating gate polysilicon layer on a substrate, forming a silicon oxide layer on the floating gate polysilicon layer, depositing a first silicon oxynitride layer on the silicon oxide layer, depositing a high-k dielectric material layer on the first silicon oxynitride layer, depositing a second silicon oxynitride on the high-k dielectric material, and forming a control gate polysilicon layer on the second silicon oxynitride layer. In one embodiment, the high-k dielectric material layer comprises hafnium silicon oxynitride.
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