APPARATUS AND METHOD FOR MONITORING CHAMBER STATUS IN SEMICONDUCTOR FABRICATION PROCESS

摘要

PURPOSE: A chamber state monitoring apparatus and a method thereof are provided to increase the accuracy of the etching process through the measurement of spatial profile by implementing the measurement of the chamber state effectively from a plurality of positions. CONSTITUTION: A plurality of chambers(10) offers the space for operating the etching process of the semiconductor wafer. A division multiplexer(30) outputs the optical signal which is time multiplexed through an optical fiber probe(20). A multiple input optical emission spectroscopy(40) measures the spectrum envelope by multiplexing the optical signal.