发明名称 Thin film transistor array panel with common bars of different widths
摘要 A gate wire and a storage electrode wire extending in a transverse direction are provided, and a data wire extending in a longitudinal direction intersects the gate wire and the storage electrode wire. A plurality of pixel electrodes and a plurality of TFTs are provided on pixel areas defined by the intersections of the data wire and the gate wire. The storage electrode wire is interconnected by a plurality of storage electrodes connections provided on the pixel areas. In this way, a common bar disposed between gate pads and a display area is omitted or has reduced width. Therefore, the fan-out areas becomes to have sufficient size to reduce the resistance difference between the signal lines.
申请公布号 US7910927(B2) 申请公布日期 2011.03.22
申请号 US20100715319 申请日期 2010.03.01
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM SANG-SOO;KIM DONG-GYU
分类号 G02F1/1343;H01L29/04;G02F1/1362;G02F1/1368;G09F9/30;H01L21/3205;H01L21/77;H01L21/84;H01L23/52;H01L27/12;H01L27/13;H01L29/786;H01L31/036;H01L31/0376;H01L31/20;H01L51/50 主分类号 G02F1/1343
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