发明名称 |
Thin film transistor array panel with common bars of different widths |
摘要 |
A gate wire and a storage electrode wire extending in a transverse direction are provided, and a data wire extending in a longitudinal direction intersects the gate wire and the storage electrode wire. A plurality of pixel electrodes and a plurality of TFTs are provided on pixel areas defined by the intersections of the data wire and the gate wire. The storage electrode wire is interconnected by a plurality of storage electrodes connections provided on the pixel areas. In this way, a common bar disposed between gate pads and a display area is omitted or has reduced width. Therefore, the fan-out areas becomes to have sufficient size to reduce the resistance difference between the signal lines.
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申请公布号 |
US7910927(B2) |
申请公布日期 |
2011.03.22 |
申请号 |
US20100715319 |
申请日期 |
2010.03.01 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM SANG-SOO;KIM DONG-GYU |
分类号 |
G02F1/1343;H01L29/04;G02F1/1362;G02F1/1368;G09F9/30;H01L21/3205;H01L21/77;H01L21/84;H01L23/52;H01L27/12;H01L27/13;H01L29/786;H01L31/036;H01L31/0376;H01L31/20;H01L51/50 |
主分类号 |
G02F1/1343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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