| 摘要 |
PURPOSE: A semiconductor storage node electrode forming method is provided to improve the stability and the reliability of a capacitor by preventing the bridge defect of the capacitor while increasing the capacitance of the capacitor. CONSTITUTION: An etch stopping layer(120) is formed on an inter-layer insulating film(105) including the contact plug. A first HDP oxidation layer(130) is formed on the etch stopping layer. A second HDP oxidation layer(135) is formed on the first HDP oxidation layer. A supporting membrane(140) is formed on the second HDP oxidation layer. A third HDP oxidation layer(145) is formed on the supporting membrane.
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