Multi-layered thin films, thin film transistor array panel including the same, and method of manufacturing the panel

摘要

A thin film transistor array panel is provided, which includes: a semiconductor layer; a first insulating layer on the semiconductor layer; a gate line including a first amorphous silicon layer and a metal; a second insulating layer covering the gate line; and a data line formed on the second insulating layer. A variously tapered structure of the signal line may be formed by providing an amorphous silicon layer having good adhesion characteristics. The adhesion between the metal layer and the amorphous silicon layer may be improved by performing a thermal treatment process such that the contact resistance may be reduced therebetween. Accordingly, the characteristics and reliability of the TFT may be improved.