| 摘要 |
A supporting base, including a supporting plate and holders, holds a sapphire substrate so that one substrate surface faces a hot plate and the other substrate surface faces a radiant heat absorbing plate mounted on the supporting plate. Radiant heat from the hot plate passes through the sapphire substrate and heats the radiant heat absorbing plate. The sapphire substrate is heated from both sides by air warmed by the hot plate and radiant heat absorbing plate, and therefore does not warp. When the temperature of the sapphire substrate has reached the necessary level, the supporting base delivers the sapphire substrate to the surface of the hot plate, then moves away while the sapphire substrate is held against the hot plate and a semiconductor fabrication process is carried out on the sapphire substrate.
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