| 摘要 |
The present disclosure relates to methods of treating a silicon substrate with an ultra-fast laser to create a getter material for example in a substantially enclosed MEMS package. In an embodiment, the laser treating comprises irradiating the silicon surface with a plurality of laser pulses adding gettering microstructure to the treated surface. Semiconductor based packaged devices, e.g. MEMS, are given as examples hereof.
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