发明名称 PROGRAMMING METHOD OF NON-VOLATILE MEMORY DEVICE
摘要 PURPOSE: A programming method of a non-volatile memory device is provided to improve a cell distribution by using verification pulse having at least two levels. CONSTITUTION: In a programming method of a non-volatile memory device, a program pulse is applied to a word line(S220). The frequency of applying the program pulse is counted(S230). A first verification pulse is applied to the word line(S240). A second verification pulse is applied to the word line(S250). The verification pulse is applied. The level of the verification pulse is determined the frequency.
申请公布号 KR20110028937(A) 申请公布日期 2011.03.22
申请号 KR20090086583 申请日期 2009.09.14
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, SE HOON
分类号 G11C16/34;G11C16/08;G11C16/32 主分类号 G11C16/34
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