发明名称 |
Semiconductor device and associated layouts having transistors formed from linear conductive segment with non-active neighboring linear conductive segment |
摘要 |
A semiconductor device is disclosed as having a substrate portion that includes a plurality of diffusion regions that include at least one p-type diffusion region and at least one n-type diffusion region. A gate electrode level region is formed above the substrate portion to include a number of conductive features defined to extend in only a first parallel direction. Each of the conductive features within the gate electrode level region is fabricated from a respective originating rectangular-shaped layout feature. Each of the conductive features within the gate electrode level region has a width less than a wavelength of light used in a photolithography process to fabricate the conductive features. Conductive features within the gate electrode level region form respective PMOS transistor devices and respective NMOS transistor devices. A number of the PMOS transistor devices is equal to a number of the NMOS transistor devices in the gate electrode level region.
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申请公布号 |
US7910958(B2) |
申请公布日期 |
2011.03.22 |
申请号 |
US20090563031 |
申请日期 |
2009.09.18 |
申请人 |
TELA INNOVATIONS, INC. |
发明人 |
BECKER SCOTT T.;SMAYLING MICHAEL C. |
分类号 |
H01L27/10 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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