发明名称 Use of dual mask processing of different composition such as inorganic/organic to enable a single poly etch using a two-print-two-etch approach
摘要 In accordance with the invention, there are methods of making an integrated circuit, an integrated circuit device, and a computer readable medium. A method can comprise forming a first layer over a semiconductor substrate, forming a first mask layer over the semiconductor substrate, and using the first mask layer to pattern first features. The method can also include forming a second mask layer over the first features, using the second mask layer to pattern portions of the first features, removing the second mask layer, and removing the first mask layer.
申请公布号 US7910289(B2) 申请公布日期 2011.03.22
申请号 US20060326392 申请日期 2006.01.06
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 RATHSACK BENJAMEN MICHAEL;BLATCHFORD JAMES WALTER;VITALE STEVEN ARTHUR
分类号 G03F7/20 主分类号 G03F7/20
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