SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A semiconductor memory device is provided to configure a circuit for controlling the potential of a source line by a switch, a MOS transistor, and a resistor, thereby controlling the potential of a source line in a memory cell without waste of power. CONSTITUTION: The first gate is adjacent to the first diffusion layer. The second diffusion layer is adjacent to the first gate. The second gate is adjacent to the second diffusion layer. The third diffusion layer is adjacent to the second gate. The third gate is adjacent to the third diffusion layer. The fourth diffusion layer is adjacent to the third gate.