| 摘要 |
FIELD: machine building. ^ SUBSTANCE: here is disclosed sapphire substrate with flat surface and crystallographic orientation chosen from group including orientation in a-plane, r-plane, m-plane and c-plane. Also, this substrate has nTTV approximately not over 0.037 mcm/cm2, nTTV corresponds to change of total thickness normalised relative to area of flat surface. The substrate has approximate diametre not less, than 9.0 cm. ^ EFFECT: production of substrates of high quality with large surface areas. ^ 15 cl, 6 tbl, 5 dwg |
