发明名称 METHOD OF CONTINUOUS MONOSILANE PRODUCTION
摘要 FIELD: process engineering. ^ SUBSTANCE: invention can be used in production of semiconductor silicon. Monosilane is produced from silicon halogenid and metal hydride at their stoichiometric ratio in liquid reaction medium in one vertical reaction column divided, over height, into reaction zones by contact devices that allow contact between gas and fluid. Initial metal hydride 2 is introduced into column top, while initial silicon halogenid is fed into column bottom to above fluid layer. Produced silane 3 is withdrawn from column top while produced metal halogenid 4 withdrawn from column bottom. Colum is cooled by external flow of coolant. Heat release is controlled while feed is reagents is adjusted in compliance with heat release. Process is conducted at atmospheric pressure and 10-110 C. ^ EFFECT: large-volume production of monosilane in column-type plants. ^ 35 cl, 1 dwg, 2 ex
申请公布号 RU2414421(C2) 申请公布日期 2011.03.20
申请号 RU20090117349 申请日期 2009.05.07
申请人 FEDERAL'NOE GOSUDARSTVENNOE UNITARNOE PREDPRIJATIE "GOSUDARSTVENNYJ ORDENA TRUDOVOGO KRASNOGO ZNAMENI NAUCHNO-ISSLEDOVATEL'SKIJ INSTITUT KHIMII I TEKHNOLOGII EHLEMENTOORGANICHESKIKH SOEDINENIJ" (FGUPGNIIKHTEHOS);FIRMA KSS KORPOREJSHIN RESPUBLIKA KOREJA 发明人 ENDOVIN JURIJ PETROVICH;PERERVA OLEG VALENTINOVICH;CHEKRIJ ELENA NIKOLAEVNA;STOROZHENKO PAVEL ARKAD'EVICH;POLIVANOV ALEKSANDR NIKOLAEVICH;KANG GENG KHUN
分类号 C01B33/04 主分类号 C01B33/04
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