| 摘要 |
<p>A process for the preparation of a CuInGaSe2 thin film useable as an absorber layer in CulnGaSe2/CdS solar cells, in which said thin film is obtained by sputtering deposition of a Cu-Ga alloy on a CuInSe2 film, deposited on a substrate covered by an Mo film, and subsequent selenization. Before selenization, In2Se3 and Cu are mixed in a vacuum chamber in the absence of Se. The process uses a polycrystalline target for the deposition of In2Se3. This process is suitable for the production - at industrial level - of CdS thin film solar cells in which the absorber layer is constituted by Cu(In1Ga)Se2.</p> |
