SUPER JUNCTION TRENCH POWER MOSFET DEVICE FABRICATION

摘要

Methods of fabricating a super junction trench power MOSFET (metal oxide semiconductor field effect transistor) device are described. A column of p- type dopant in the super junction is separated from a first column of n-type dopant by a first column of oxide and from a second column of n-type dopant by a second column of oxide. In an n-channel device, a gate element for the FET is advantageously situated over the column of p-type dopant; and in a p-channel device, a gate element for the FET is advantageously situated over the column of n-type dopant.