| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having high aperture rate or a method for manufacturing the same; and to provide a semiconductor device having low power consumption or a method for manufacturing the same. <P>SOLUTION: The semiconductor device has a pixel portion having a first thin film transistor and a driver circuit having a second thin film transistor. The first thin film transistor has a gate electrode layer, a gate insulating layer, a semiconductor layer, a source electrode layer, and a drain electrode layer. The gate electrode layer, the gate insulating layer, the semiconductor layer, the source electrode layer and the drain electrode layer of the first thin film transistor each have a light-transmitting property. The gate electrode layer of the second thin film transistor is made of a material different from the material of the gate electrode layer of the first thin film transistor, and has a conductive layer of resistance lower than that of the gate electrode layer of the first thin film transistor. The source electrode layer and the drain electrode layer of the second thin film transistor are made of materials different from those of the source electrode layer and the drain electrode layer of the first thin film transistor, and have a conductive layer of resistance lower than those of the source electrode layer and the drain electrode layer of the first thin film transistor. <P>COPYRIGHT: (C)2011,JPO&INPIT |
