发明名称 |
RARE EARTH-DOPED SAPPHIRE FILMS AND RELATED METHODS |
摘要 |
The present invention relates to the growth of single phase rare earth-doped sapphire (α-Al2O3) films on substrates by molecular beam epitaxy. The invention provides for composition of matters, neodymium-doped sapphire films, and methods for making and using thin films of this material. The rare earth-doped films of the present invention are especially useful in solid state lasers.
|
申请公布号 |
US2011062394(A1) |
申请公布日期 |
2011.03.17 |
申请号 |
US20100851427 |
申请日期 |
2010.08.05 |
申请人 |
UNIVERSITY OF BRITISH COLUMBIA |
发明人 |
KUMARAN RAVEEN;TIEDJE THOMAS;WEBSTER SCOTT;PENSON SHAWN |
分类号 |
G02B5/20;C30B23/08 |
主分类号 |
G02B5/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|