| 摘要 |
First, hydrofluoric acid is supplied to the circumferential edge of a substrate W while the substrate W provided with a polysilicon film is rotated, to remove a natural oxide film provided along the circumferential edge of the substrate W by etching so as to expose the polysilicon film. Next, hydrofluoric-nitric acid is supplied to the circumferential edge of the substrate W while the substrate W from which the polysilicon film is exposed is rotated, to remove the polysilicon film by etching. Such operation is performed by controlling a rotational driving unit 20, a hydrofluoric acid supplying unit 54, and a hydrofluoric-nitric acid supplying unit 52 by a control unit 50 of a substrate liquid-processing apparatus 1.
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