| 摘要 |
The light-emitting chip includes: a substrate; plural light-emitting thyristors each having a pnpn structure formed of a first stacked-semiconductor layer in which at least 4 semiconductor layers having different conductivity types and including the substrate are stacked on the substrate; a lower wiring that is formed of a second stacked-semiconductor layer in which at least 3 semiconductor layers having different conductivity types and including the substrate are stacked on the substrate, and that has a semiconductor layer between the substrate and an uppermost semiconductor layer of the second stacked-semiconductor layer, the semiconductor layer having a fixed potential so that any one of p-n junctions between the substrate and the uppermost semiconductor layer is reversely biased with respect to potentials respectively applied to the substrate and the uppermost semiconductor layer; and an upper wiring provided on the lower wiring so as to intersect with the lower wiring through an isolation layer. |
