THERMALLY SHIELDED RESISTIVE MEMORY ELEMENT FOR LOW PROGRAMMING CURRENT

摘要

Various embodiments described herein provide a memory device including a variable resistance material (210) having a thermally isolating and electrically conductive isolation region (270, 280) arranged between the variable resistance material and an electrode (220 or 230) to allow for efficient heating of the variable resistance material by a programming current. An electrically and thermally isolating isolation region (260) may be arranged around the variable resistance material.