| 摘要 |
PURPOSE: A thin film transistor and a manufacturing method thereof are provided to use a hybrid structure that an amorphous silicon channel area and a silicon channel area coexist in an active layer, thereby obtaining high mobility and low off-current properties. CONSTITUTION: Gate electrodes(121a,121b) are arranged in parallel on a substrate(110). A gate insulating film(115a) is formed on a substrate with the gate electrodes. An active layer(124) is formed by amorphous silicon on the substrate. Source/drain electrodes(122,123) are electrically connected to source/drain areas of the active layer on a substrate with the active layer. Laser is irradiated from an offset area to crystallize a fixed area of the active layer. |
