| 摘要 |
A method of manufacturing a semiconductor device includes: performing, in a case of manufacturing a first semiconductor device which operates by a first power supply voltage, at least one step from among channel ion implantation, gate oxide film formation, and gate electrode patterning according to a process of forming an element which operates with the first power supply voltage; performing, in a case of manufacturing a second semiconductor device which operates by a second power supply voltage, at least one step from among the channel ion implantation, the gate oxide film formation, and the gate electrode patterning according to a process of forming an element which operates with the second power supply voltage; and commonly performing at least diffusion region formation in the case of manufacturing the first semiconductor device and in the case of manufacturing the second semiconductor device.
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