发明名称 |
STRUCTURE AND METHOD TO MINIMIZE REGROWTH AND WORK FUNCTION SHIFT IN HIGH-K GATE STACKS |
摘要 |
The present invention provides a semiconductor structure comprising high-k material portions that are self-aligned with respect to the active areas in the semiconductor substrate and a method of fabricating the same. The high-k material is protected from oxidation during the fabrication of the semiconductor structure and regrowth of the high-k material and shifting of the high-k material work function is prevented.
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申请公布号 |
US2011062546(A1) |
申请公布日期 |
2011.03.17 |
申请号 |
US20090557934 |
申请日期 |
2009.09.11 |
申请人 |
IBM CORPORATION |
发明人 |
CHENG KANGGUO;DORIS BRUCE B.;KULKAMI PRANITA |
分类号 |
H01L29/06;H01L21/762 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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