| 发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
<p>An interlayer insulating film (12), including at least one layer of an insulating film, is formed on a substrate (10), then, a first mask film (16) is formed such that the mask film is embedded in the upper portion of the interlayer insulating film (12) which has been formed. Then, a second mask film (17) is formed on the interlayer insulating film (12) and the first mask film (16), and a via hole (19) is formed in the interlayer insulating film (12) using the second mask film (17) which has been formed. Then, a wiring groove (20) is formed in the interlayer insulating film (12) using the first mask film (16), and a via and wiring are formed by embedding a conductive material in the via hole (19) and the wiring groove (20).</p> |
| 申请公布号 |
WO2011030476(A1) |
申请公布日期 |
2011.03.17 |
| 申请号 |
WO2010JP02664 |
申请日期 |
2010.04.13 |
| 申请人 |
PANASONIC CORPORATION;HIRAO, SHUJI;MURAKAMI, KYOJI;KOBAYASHI, KENJI |
发明人 |
HIRAO, SHUJI;MURAKAMI, KYOJI;KOBAYASHI, KENJI |
| 分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
| 代理机构 |
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