摘要 |
<p>This invention generally relates to lateral insulated gate bipolar transistors (LIGBTs), for example in integrated circuits, methods of increasing switching speed of an LIGBT, a method of suppressing parasitic thyristor latch-up in a bulk silicon LIGBT, and methods of fabricating an LIGBT. In particular, a method of suppressing parasitic thyristor latch-up in a bulk silicon LIGBT comprises selecting a current gain av for a vertical transistor of a parasitic thyristor of the LIGBT such that in at least one predetermined mode of operation of the LIGBT av < 1 - ap where ap is a current gain of a parasitic bipolar transistor having a base-emitter junction formed by a Schottky contact between the a semiconductor surface and a metal enriched epoxy die attach.</p> |
申请人 |
CAMBRIDGE SEMICONDUCTOR LIMITED;UDREA, FLORIN;TRAJKOVIC, TANYA;PATHIRANA, VASANTHA;UDUGAMPOLA, NISHAD |
发明人 |
UDREA, FLORIN;TRAJKOVIC, TANYA;PATHIRANA, VASANTHA;UDUGAMPOLA, NISHAD |