发明名称 |
POWER DEVICE WITH SELF-ALIGNED SILICIDE CONTACT |
摘要 |
An improved power device with a self-aligned suicide and a method for fabricating the device are disclosed. An example power device is a vertical power device that includes contacts formed on gate and body contact regions by an at least substantially self-aligned silicidation (e.g., salicide) process. The example device may also include one or more sidewall spacers that are each at least substantially aligned between edges of the gate region and the body contact region. The body contact region may also be implanted into the device in at least substantial self-alignment to the sidewall spacer. The method may also include an at least substantially self-aligned silicon etch.
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申请公布号 |
US2011062489(A1) |
申请公布日期 |
2011.03.17 |
申请号 |
US20090557841 |
申请日期 |
2009.09.11 |
申请人 |
DISNEY DONALD R;MILIC OGNJEN |
发明人 |
DISNEY DONALD R.;MILIC OGNJEN |
分类号 |
H01L29/739;H01L21/82;H01L29/78 |
主分类号 |
H01L29/739 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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