| 发明名称 |
Silicon carbide semiconductor device |
| 摘要 |
A silicon carbide semiconductor device comprising a region of germanium and a region of crystalline or polycrystalline silicon carbide. The germanium region and the silicon carbide region are configured to form a germanium/silicon carbide heterojunction.
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| 申请公布号 |
US2011062450(A1) |
申请公布日期 |
2011.03.17 |
| 申请号 |
US20090586018 |
申请日期 |
2009.09.15 |
| 申请人 |
THE UNIVERSITY OF WARWICK |
发明人 |
GAMMON PETER MICHAEL;MAWBY PHIL;PEREZ-TOMAS AMADOR |
| 分类号 |
H01L29/24;H01L21/04 |
主分类号 |
H01L29/24 |
| 代理机构 |
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