发明名称 Verfahren zur Herstellung einer Halbleitervorrichtung
摘要 One method includes fabricating a semiconductor device including providing a dielectric layer. At least one semiconductor chip is provided defining a first surface including contact elements and a second surface opposite to the first surface. The semiconductor chip is placed onto the dielectric layer with the first surface facing the dielectric layer. An encapsulant material is applied over the second surface of the semiconductor chip in a reel-to-reel process.
申请公布号 DE102010000059(A1) 申请公布日期 2011.03.17
申请号 DE20101000059 申请日期 2010.01.12
申请人 INFINEON TECHNOLOGIES AG 发明人 BEER, GOTTFRIED;ESCHER-POEPPEL, IRMGARD
分类号 H01L21/56 主分类号 H01L21/56
代理机构 代理人
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