| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device improved in a yield without causing a defect in a step part; and to provide a method of manufacturing the same. <P>SOLUTION: This nonvolatile semiconductor memory device includes: word-line conductive layers 41a-41d laminated throughout a memory region AR1 and a peripheral region AR2; a U-shaped semiconductor layer 45 surrounded by the word-line conductive layers 41a-41d in the memory region AR1 and including columnar parts 45A extending in the vertical direction with respect to a substrate; and a memory gate insulation layer 44 formed between side surfaces of the columnar parts 45A and the word-line conductive layers 41a-41d. The word-line conductive layers 41a-41d include: grooves T1B arranged at first pitches P1 in the column direction in the memory region AR1 and formed into a stripe-like shape using the row direction as a longitudinal direction; and grooves T2 arranged at second pitches P2 in columns in the peripheral region AR2, and formed in a stripe-like shape using the row direction as a longitudinal direction. <P>COPYRIGHT: (C)2011,JPO&INPIT |
