发明名称 |
SEMIPOLAR NITRIDE-BASED DEVICES ON PARTIALLY OR FULLY RELAXED ALLOYS WITH MISFIT DISLOCATIONS AT THE HETEROINTERFACE |
摘要 |
A dislocation-free high quality template with relaxed lattice constant, fabricated by spatially restricting misfit dislocation(s) around heterointerfaces. This can be used as a template layer for high In composition devices. Specifically, the present invention prepares high quality InGaN templates (In composition is around 5-10%), and can grow much higher In-composition InGaN quantum wells (QWs) (or multi quantum wells (MQWs)) on these templates than would otherwise be possible.
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申请公布号 |
US2011064103(A1) |
申请公布日期 |
2011.03.17 |
申请号 |
US20100861532 |
申请日期 |
2010.08.23 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
OHTA HIROAKI;WU FENG;TYAGI ANURAG;CHAKRABORTY ARPAN;SPECK JAMES S.;DENBAARS STEVEN P.;NAKAMURA SHUJI;YOUNG ERIN C. |
分类号 |
H01S5/343;B82Y20/00;C30B23/02;C30B25/02;H01L33/04 |
主分类号 |
H01S5/343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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