发明名称 |
MOS GATE POWER SEMICONDUCTOR DEVICE |
摘要 |
A MOS-gate power semiconductor device includes: a main device area including an active area and an edge termination area; and an auxiliary device area horizontally formed outside the main device area so as to include one or more diodes. Accordingly, it is possible to protect a circuit from an overcurrent and thus to prevent deterioration and/or destruction of a device due to the overcurrent.
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申请公布号 |
US2011062490(A1) |
申请公布日期 |
2011.03.17 |
申请号 |
US20100705246 |
申请日期 |
2010.02.12 |
申请人 |
OH KWANG-HOON;CHOO BYOUNG-HO;KIM SOO-SEONG;YUN CHONG-MAN |
发明人 |
OH KWANG-HOON;CHOO BYOUNG-HO;KIM SOO-SEONG;YUN CHONG-MAN |
分类号 |
H01L27/06 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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