发明名称 |
MANUFACTURING METHOD OF COMPOUND SEMICONDUCTOR MATERIAL, AND COMPOUND SEMICONDUCTOR MATERIAL USING THE SAME |
摘要 |
The present invention provides a manufacturing method of group III-V compound semiconductor material including a step of making a metal oxide nano-particle of a group III metal element reductively react to a group-V-element-containing compound in order to manufacture compound semiconductor material comprised of two or more element compounds.
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申请公布号 |
US2011062391(A1) |
申请公布日期 |
2011.03.17 |
申请号 |
US20090627312 |
申请日期 |
2009.11.30 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
KIM JAE IL;HAM SUK JIN;CHO DONG HYUN;LEE IN HYUNG |
分类号 |
H01B1/04 |
主分类号 |
H01B1/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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