发明名称 POWER SEMICONDUCTOR MODULE
摘要 <p><P>PROBLEM TO BE SOLVED: To reduce the manufacturing cost of a power semiconductor module by eliminating a complicated manufacturing process by a hand method. <P>SOLUTION: The power semiconductor module 100 includes an insulating substrate 1, a thyristor chip 2, a diode chip 5, a temperature compensation plate 3 having, at a center part, an opening 3a opposed to a gate electrode 2a of the thyristor chip 2, a temperature compensation plate 6 disposed on an anode electrode 5a of the diode chip 5, a gate signal relay member 4 disposed on the gate electrode 2a of the thyristor chip 2, an enclosure resin case 8 covering them, external lead-out terminals 9a, 9b and 9c insert-molded on the enclosure resin case 8, and a gate signal input terminal 9d and a cathode signal output terminal 9e, wherein a lower end part of the gate signal input terminal 9d is stored in a hole 4b1 of an upper end part 4b of the gate signal relay member 4 when the enclosure resin case 8 is arranged on a heat sink 7. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011054896(A) 申请公布日期 2011.03.17
申请号 JP20090204927 申请日期 2009.09.04
申请人 NIPPON INTER ELECTRONICS CORP 发明人 MONZEN TOMOYA;BABA HIDEAKI;YAMAGUCHI MAKOTO;NEMOTO KOJI
分类号 H01L25/07;H01L25/18 主分类号 H01L25/07
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