| 摘要 |
PROBLEM TO BE SOLVED: To solve the following problem with a conventional semiconductor device: an electrode on the front surface side of a substrate is discolored by a plasma process on the rear surface side of the substrate, and a plasma process is applied onto an SiN film as well. SOLUTION: A back electrode 13 is arranged on the rear surface side of a silicon substrate 2, and an Al layer 14 constituting the back electrode 13 is directly arranged on the silicon substrate 2. In the Al layer 14, adhesiveness between the silicon substrate 2 and the back electrode 13 is improved by forming the silicon substrate 2 and an Al spike. This structure eliminates the need for plasma process on the silicon substrate 2. So, discoloration of a pad electrode 12 on the front surface side of the silicon substrate 2 is prevented, and a jacket film 10 is prevented from being plasma-processed. COPYRIGHT: (C)2011,JPO&INPIT
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