| 摘要 |
PROBLEM TO BE SOLVED: To separate a reaction product produced in etching quickly from an etched layer to suppress nonuniformity of etching rates on an etched surface. SOLUTION: The etched layer is formed on a substrate 300. A mask pattern is then formed on that etched layer, which is then wet etched using the mask pattern as a mask. In this wet etching, the substrate 300 with the mask pattern directed downward is submerged in an etching bath 100. COPYRIGHT: (C)2011,JPO&INPIT
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