| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device of low on-resistance and faster switching. SOLUTION: A semiconductor device 100 includes: a first base layer 110 of first conductive type; a plurality of second base layers 130 of second conductive type that are partially provided on the first surface of the first base layer 100; a trench 155 formed deeper than the second base layer 130 on both sides of the second base layer 130; an emitter layer 140 formed along the trench 155 on each surface of the second base layer 130; a collector layer 120 of second conductive type provided on the second surface of the first base layer 110 on the side opposite to the first surface; a gate electrode 160 which is formed in the trench 155 and insulated from the second base layer 130 and the emitter layer 140 by an insulating film 150 formed on the inner wall of the trench 155; and spaces 190 and 155 that are provided between adjoining second base layers 130, being deeper than the second base layer 130, and insulated electrically from the emitter layer 140 and the second base layer 130. COPYRIGHT: (C)2011,JPO&INPIT |
