发明名称 Semiconductor device fabrication method and pattern formation mold
摘要 According to the present invention, there is provided a semiconductor device fabrication method comprising, bringing a mold having a predetermined pattern into contact with at least a portion of an imprinting material formed on a substrate to be processed, and forming the pattern on the substrate to be processed by sequentially transferring the pattern for each shot, wherein one of a dicing region and a monitor pattern formation region of the substrate to be processed is coated with the imprinting material.
申请公布号 US2011065254(A1) 申请公布日期 2011.03.17
申请号 US20100926359 申请日期 2010.11.12
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 YONEDA IKUO;MAGOSHI SHUNKO
分类号 H01L21/30 主分类号 H01L21/30
代理机构 代理人
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