发明名称 RESIST COMPOSITION, AND PATTERN FORMING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a resist composition capable of preparing a resist pattern excellent in sensitivity. <P>SOLUTION: The resist composition contains a photoradical generating agent, an acid generating agent, and a resin having a group unstable to an acid, insoluble or slightly soluble in an aqueous alkaline solution, and dissolved in the aqueous alkaline solution after the acid acts on the resin, and this pattern forming method includes (1) a step of applying the resist composition onto a substrate, (2) a step of removing a solvent from the composition after applied, to form a composition layer, (3) a step of exposing the composition layer to a light, using an exposure machine, (4) a step of heating the composition layer after exposed, and (5) a step of developing the composition layer after heated, using a developing device. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011053606(A) 申请公布日期 2011.03.17
申请号 JP20090204704 申请日期 2009.09.04
申请人 SUMITOMO CHEMICAL CO LTD 发明人 FURUYAMA FUMIO;ICHIKAWA KOJI
分类号 G03F7/039;G03F7/004;H01L21/027 主分类号 G03F7/039
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