| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor capable of reducing a defect generated in a film of the thin-film transistor and also reducing variations in a defect generation position in a substrate plane, and to provide a display device using the same. SOLUTION: The thin-film transistor includes a semiconductor layer where a drain region and a source region are formed, a silicon oxide film layer formed under the semiconductor layer and preventing an impurity from being mixed with the semiconductor layer, and a silicon nitride film layer formed under the silicon oxide film layer and preventing an impurity from being mixed with the semiconductor layer together with the silicon oxide film layer, wherein the silicon oxide film layer includes a first silicon oxide film interface layer formed over the silicon nitride film layer, a silicon oxide film bulk layer formed over the first silicon oxide film, and a second silicon oxide film interface layer formed over the silicon oxide film bulk layer, the first silicon oxide film interface layer includes a silicon oxide nitride film, and the second silicon oxide film interface layer includes an oxygen-deficit silicon oxide nitride film. COPYRIGHT: (C)2011,JPO&INPIT |
