发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a resist pattern designed to reduce a manufacturing cost by improving efficiency in the use of a resist material, to provide a method for removing a resist pattern, and to provide a method for manufacturing a semiconductor device. SOLUTION: This invention includes a step of forming the resist pattern by discharging a composition containing a photosensitizer on an object to be processed under reduced pressure. This invention includes a step of etching the object to be processed using the resist pattern as a mask, a step of irradiating the resist pattern through a photomask with light within a photosensitive wavelength region of the photosensitizer, and a step of removing the resist pattern on the object to be processed. COPYRIGHT: (C)2011,JPO&INPIT |
申请公布号 |
JP2011054994(A) |
申请公布日期 |
2011.03.17 |
申请号 |
JP20100258031 |
申请日期 |
2010.11.18 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;SHIINA YASUKO;ARAI YASUYUKI |
分类号 |
H01L21/027;G02F1/1368;G03F7/00;G03F7/16;H01L21/28;H01L21/3213;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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