| 摘要 |
PROBLEM TO BE SOLVED: To allow a region where p/n-type inversion is caused to be formed in a depth range deeper than before. SOLUTION: A silicon wafer is a p-type wafer, which is doped with nitrogen, and has a p-type surface region of 0.1 to 10 kΩcm in resistance distribution in a depth direction from a surface, a peak region increasing and decreasing in resistance value in the depth direction to have a peak, and a p/n-type inversion depth region by an oxygen donor through a heat treatment of 1100 to 1250°C in processing temperature and 1 to 5 hours in processing time in an atmosphere of an argon gas, a hydrogen gas, or a mixed gas thereof, the peak position in the peak region being within a depth range of 10 to 70μm from the wafer surface. COPYRIGHT: (C)2011,JPO&INPIT
|
