| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a base material for carbon nanotube production, in which growth nuclei of a catalytic element are formed while using an ion implantation method, a method for producing carbon nanotubes using the base material, a semiconductor device, and a method for manufacturing a semiconductor device. SOLUTION: The method for producing a base material for carbon nanotube production includes a growth nuclei formation step wherein ions of a catalytic element are implanted into a substrate 21' having an insulating film 25 located on a surface thereof and having predetermined crystal orientation in a state where the substrate 21' is adjusted to a predetermined temperature of ≤1,000°C, whereby growth nuclei 27 comprising the catalytic element are formed at the interface between the substrate 21' and the insulating film 25. COPYRIGHT: (C)2011,JPO&INPIT |
