| 摘要 |
A magnetic tunnel junction having a first electrode separated from a second electrode by a tunneling barrier is provided. The tunneling barrier is a ferromagnetic insulator that provides a spin dependent barrier energy for tunneling. The first electrode includes a ferromagnetic, electrically conductive layer. Electrons emitted from the first electrode toward the tunneling barrier are partially or completely spin-polarized according to the magnetization of the ferromagnetic electrode layer. The electrical resistance of the tunnel junction depends on the relative orientation of the electrode layer magnetization and the tunneling barrier magnetization. Such tunnel junctions are widely applicable to spintronic devices, such as spin valves, magnetic tunnel junctions, spin switches, spin valve transistors, spin filters, and to spintronic applications such as magnetic recording, magnetic random access memory, ultrasensitive magnetic field sensing (including magnetic biosensing), spin injection and spin detection.
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