| 摘要 |
Provided is a thin film photoelectric conversion device with maximized output characteristic, by improving an uneven current value of a photoelectric conversion cell caused by an uneven film thickness and an uneven film quality of a photoelectric conversion semiconductor layer, which may be generated in scaling up an integrated-type thin film photoelectric conversion device. The thin film photoelectric conversion device includes: a substrate, a transparent electrode layer, a photoelectric conversion unit, and a back electrode layer. An increasing rateΔZt of the film thickness Zt of the transparent electrode layer along X and an increasing rateΔZs of the film thickness Zs of the photoelectric conversion unit along X have different signs, whereas one line segment in a parallel direction to a main surface of the substrate is taken as X″.
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