SYSTEMS AND METHODS FOR REDUCING MEMORY ARRAY LEAKAGE IN HIGH CAPACITY MEMORIES BY SELECTIVE BIASING

摘要

A source-biasing mechanism for leakage reduction in SRAM in which SRAM cells are arranged into a plurality of sectors. In standby mode, the SRAM cells in a sector in the plurality of sectors are deselected and a source-biasing potential is provided to the SRAM cells of the plurality sectors. In working mode, the source-biasing potential provided to the SRAM cells of a selected sector in the plurality of sectors is deactivated and the SRAM cells in a physical row within the selected sector are read while the remaining SRAM cells in the unselected sectors continue to be source-biased. The source-biasing potential provided to the SRAM cells that are in standby mode can be set to different voltages based on the logical state of control signals.