PRAM MEMORY DEVICE, MEMORY SYSTEM HAVING THE SAME, AND METHOD OF PROGRAMMING PRAM MEMORY DEVICE

摘要

PURPOSE: A PRAM memory device, a memory system having the same, and a method of a programming PRAM memory device are provided to increase program efficiency by adjusting the number of applying a verification pulse and the interval of thereof. CONSTITUTION: In an PRAM memory device, a memory system having the same, and a method of a programming PRAM memory device, a write pulse is applied to phase-change memory cells. Write data is programmed in phase-change memory cells(S110) At least one verification pulse is applied to the phase-change memory cells. It is determined whether a phase-change memory cells is programmed or not(S120).