SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

Disclosed is a process for producing a semiconductor device (1),which comprises the steps of: forming a semiconductor layer comprising SiC on an SiC substrate; forming a film on the semiconductor layer; and forming a groove (2) on the film. The semiconductor device (1) is equipped with a chip (10) which has an interlayer insulating film formed thereon. The semiconductor device is characterized in that the groove (2) is so formed on the interlayer insulating film as to cross through the chip (10).